? 2002 ixys all rights reserved to-264 aa (ixfk) s g d d s g s s g s d minibloc, sot-227 b (ixfn) e153432 (tab) g = gate d = drain s = source tab = drain either source terminal at minibloc can be used as main or kelvin source features ? international standard packages ? jedec to-264 aa, epoxy meet ul 94 v-0, flammability classification ? minibloc, with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space savings ? high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 800 v v dss temperature coefficient 0.096 %/k v gh(th) v ds = v gs , i d = 8 ma 2 4.5 v v gs(th) temperature coefficient -0.214 %/k i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = 0.8 ? v dss t j = 25 c 500 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 pulse test, t 300 s, 25n80 0.35 ? duty cycle d 2 % 27n80 0.30 ? symbol test conditions maximum ratings ixfk ixfn v dss t j = 25 c to 150 c 800 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 800 v v gs continuous 20 20 v v gsm transient 30 30 v i d25 t c = 25 c, chip capability 27n80 27 27 a 25n80 25 25 a i dm t c = 25 c, pulse width limited by t jm 27n80 108 108 a t c = 25 c 25n80 100 100 a i ar 27n80 14 14 a 25n80 13 13 a e ar t c = 25 c3030mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 520 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 - c v isol 50/60 hz, rms t = 1 min - 2500 v~ i isol 1 ma t = 1 s - 3000 v~ m d mounting torque 0.9/6 1.5/13 nm/lb.in. terminal connection torque - 1.5/13 nm/lb.in. weight 10 30 g hiperfet tm power mosfets n-channel enhancement mode avalanche rated, high dv/dt, low t rr 95561d(6/02) v dss i d25 r ds(on) ixfk 27n80 800 v 27 a 0.30 ? ? ? ? ? ixfk 25n80 800 v 25 a 0.35 ? ? ? ? ? ixfn 27n80 800 v 27 a 0.30 ? ? ? ? ? ixfn 25n80 800 v 25 a 0.35 ? ? ? ? ? not for new designs 4 .com u datasheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfk 25n80 ixfk 27n80 ixfn 25n80 ixfn 27n80 to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 16 28 s c iss 7930 8400 9740 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 630 712 790 pf c rss 146 192 240 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 80 ns t d(off) r g = 1 ? (external), 75 n s t f 40 ns q g(on) 320 350 400 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 38 46 56 nc q gd 120 130 142 nc r thjc to-264 aa 0.25 k/w r thck to-264 aa 0.15 k/w r thjc minibloc, sot-227 b 0.24 k/w r thck minibloc, sot-227 b 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 27n80 27 a 25n80 25 a i sm repetitive; 27n80 108 a pulse width limited by t jm 25n80 100 a v sd i f = 100 a, v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v t j =25 c 250 n s t j =125 c 400 n s q rm t j =25 c2 c i rm 17 a 4 .com u datasheet
? 2002 ixys all rights reserved ixfk 25n80 ixfk 27n80 ixfn 25n80 ixfn 27n80 i d - amperes 0 1020304050 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v gs - volts 234567 i d - amperes 0 5 10 15 20 25 30 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 5 10 15 20 25 30 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v ds - volts 0 4 8 121620 i d - amperes 0 10 20 30 40 v ds - volts 0246810 i d - amperes 0 10 20 30 40 4v v gs = 10v v gs = 9v 8v 7v 6v t j = 125 o c v gs = 10v t j = 25 o c 5v 5v 4v t j = 25 o c i d = 27a t j = 25 o c ixfk27n80 IXFN27N80 t j = 125 o c v gs = 9v 8v 7v 6v t j = 125 o c ixf_25n80 i d = 13.5a figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 5. drain current vs. case temperature figure 6. admittance curves figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 4. r ds(on) normalized to 0.5 i d25 value vs. t j 4 .com u datasheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfk 25n80 ixfk 27n80 ixfn 25n80 ixfn 27n80 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes 0 20 40 60 80 100 gate charge - nc 0 100 200 300 400 500 v gs - volts 0 2 4 6 8 10 12 vds=300v i d =30a i g =10ma coss t j = 25 o c v ds = 400v i d = 27a i g = 1ma f = 1mhz t j = 125 o c ciss crss figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 10. transient thermal resistance pulse width - seconds 0.0001 0.001 0.01 0.1 1 10 r(th) jc - k/w 0.001 0.01 0.1 1 single pulse d = duty cycle d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 d=0.2 4 .com u datasheet
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